X波段HPM窄脉冲高峰值功率T/R组件设计与实践

Design and Practice on Narrow Pulse Width and High Peak Power T/R Modules at X-band HPM

第三代半导体技术的快速发展及固态功率器件峰值功率的大幅提高,使得构建基于有源相控阵体制的高功率微波系统成为可能。与传统的相控阵雷达系统相比,其射频工作脉冲最窄要求十纳秒以下,而输出功率要达到万瓦量级,采用传统设计方法已经无法实现。文中研制了用于高功率微波系统的X波段T/R组件及其关键技术,该组件基于新型GaN大功率微波器件,采用放大链稳定级联设计实现了高峰值输出功率(数千瓦);通过高压大电流调制器和窄脉冲微波功率放大技术实现了10纳秒脉宽射频的放大输出,其前后沿达纳秒量级;应用小型化大功率合成和8通道高功率集成一体化满足结构小型化要求,阵面单位面积下的功率密度达到300W/cm^2。经测试,T/R组件性能指标满足高功率微波系统的要求,验证了固态高功率微波(HPM)相控阵体制的可行性,也为进一步实现工程化系统奠定了技术基础。

With the rapid development of the 3 rd generation semiconductor technology and the great improvement of peak power of solid-state power devices,it becomes possible to build high power microwave(HPM)system based on active phased array system.Compared with the traditional phased array radar,the narrowest RF pulse width of the HPM system must be less than 10 ns and the output power is required to be at tens of kW level,this is impossible by traditional design methods.This paper introduces the development and key technologies of X-band T/R modules for HPM system.The module based on novel GaN HPM devices can achieve high peak power(several kW)by stable amplifier chain.10 ns RF pulse width with fast leading edge and trailing edge at ns level in amplifier output is realized by the technology of high voltage and current modulation and narrow pulse width microwave power amplifying.Miniaturized high power combination and 8-channel integration are adopted to make smaller structure.The power density per unit area of array can reach 300 W/cm^2.The test shows the specifications of T/R modules can meet the requirements of HPM system,verifying the feasibility of solid-state phased-array HPM system and establishing the technical foundation for further system research and engineering.