摘要
伴随着我国电气工程以及自动化技术的快速发展,由新型功率元器件构成的三电平变流器已经成为了大功率变频器主回路设计的首选。基于此文章提出了采用三电平变流器技术的1140V变频器主回路结构,介绍了三电平变流器的拓扑结构,并且对主回路的设计进行了分析研究,给出了绝缘栅双极型晶体管、钳位二极管以及直流电容的设计方法。
Along with the rapid development of China’s electrical engineering and automation technology,by the new power components constitute the three-level inverter has become the first choice for high-power inverter main circuit design.1140V inverter main circuit structure of the three-level inverter technology,this article describes the three-level inverter topology,and analysis of the main circuit design,gives the insulated gate bipolar bipolar transistor clamping diode and the DC capacitor design.
出处
《电子测试》
2013年第3X期10-11,共2页
Electronic Test
关键词
三电平变流器
主回路
仿真设计
Three-level inverter
Main circuit
Simulation Design
