静态煅烧法除SiC微粉中碳杂质的工艺研究

Investigation of Static Calcine on removing Carbide impurity from Silicon Carbide powder

由于SiC在电子半导体方面有较大应用,纯度要求就成为主要限制,尤其是碳杂质的影响。本实验对SiC微粉首先经过不同温度的煅烧测定烧失率确定最佳煅烧温度,然后在最佳煅烧温度下通过不同保温时间测定烧失率确定最佳保温时间,对粉体进行DTA-TG测定分析样品质量变化与温度的关系,最后对实验前后的样品进行XRD物相分析,最终得到除碳最佳煅烧温度900℃,最佳保温时间3h。

SiC has a widespread use in semiconductor and electron,however the impurity of calcine is the main influencing factors,so this firstly the Silicon Carbide powder was calcined at different temperatures in order to get the best calcination temperature.Then the best heat preservation time was determined by evaluating ignition loss at this best calcination temperature.The DTA-TG curve was tested and analysed the relation between weight and temperature.Finally the XRD analysis of the sample before and after experiment were carried out.It is found that the best static calcine temperature is 900℃,and the best time to heat preservation is 3h.