碳化硅电力电子器件在电力系统的应用展望

Application prospect of silicon carbide power electronic devices in power system

就目前来看,我国的科学技术得到快速发展。在这一背景下,半导体的器件在制作以及生产的工艺上都得到一定的发展。而碳化硅属于宽带材料的一种,其主要的特点是高热导率、高饱和电子漂移速率以及高击穿场强等。通过这种新型的半导体,可以实现大功率、高压以及高温应用。另外,由于碳化硅成本的大幅度降低,且其性能得到提升,使得碳化硅在电力系统中得到普遍使用。本文将对电子系统中碳化硅电力电子器件的应用进行了深入的分析以及探讨。

At present,our country's science and technology has been rapid development.In this context,the semiconductor devices in the production and production processes have been a certain development.Silicon carbide is a kind of wide band material,which is mainly characterized by high thermal conductivity,high saturated electron drift rate and high breakdown field strength. With this new type of semiconductor,high power, high pressure and high temperature applications can be realized. In addition, due to the significant reduction in the cost of silicon carbide,and its performance is improved, making silicon carbide in the power system to be widely used.In this paper,the application of silicon carbide power electronic devices in the electronic system is analyzed and discussed in this paper.