二维半导体光电性质与器件研究进展简述

Research progress of two dimensional semiconductor optoelectronic properties and devices

二维半导体材料,如过渡金属硫族化合物,以其在光电器件方面展现出的独特性能与巨大潜力,成为后摩尔时代有极大发展前景的新半导体材料。二维材料具有独特的光电性质,如直接带隙的电子结构,谷自旋电子学特性,强激子效应等,而利用以上性质,此类材料可用于光探测器、场效应晶体管、高效微纳传感器、光电子电路等微纳光电器件中。因此,以过渡金属硫族化合物为代表的二维半导体材料无论在基础科学与未来应用方面,都是重要的备选材料。

two dimensional semiconductor materials, such as transition metal chalcogenides, with its unique performance show great potential in the field of optoelectronic devices, a new semiconductor material Moore era has great prospects for development. The two-dimensional material has unique photoelectric properties, electronic structure such as direct bandgap, valley spintronics characteristics, strong exciton effect, while using the above properties, such materials can be used in optical detector, field effect transistor, high efficient micro nano sensor, optoelectronic circuit micro nano optical devices. Therefore, twodimensional semiconductor materials represented by transition metal sulfides are important candidate materials in basic science and future applications.