摘要
制造工艺的不断进步,嵌入式存储器在片上系统芯片中的集成度越来越大,同时存储器本身也变得愈加复杂,使得存储器出现了一系列新的故障类型,比如三单元耦合故障。存储器內建自测试技术是当今存储器测试的主流方法,研究高效率的Mbist算法,是提高芯片成品率的必要前提。以SRAM的7种三单元耦合故障为研究对象,通过分析故障行为得到三单元耦合的72种故障原语,并且分析了地址字内耦合故障的行为,进而提出新的测试算法March 3CL。以2048X32的SRAM为待测存储器,利用EDA工具进行了算法的仿真,仿真结果表明,该算法具有故障覆盖率高、时间复杂度低等优点。
As the manufacturing process continues to advance,embeded memories have higher level of intergration on SOC,and at the same time the complexity of the memory itself make memories generate new fault types,such as 3-cell coupling faults Memory build in self-test has been the main methods of memory test,so an effective algorithm is an essential prerequisite to the yield improvement This paper points at seven categories of 3-cell coupling faults, we receive 72 kinds of fault primitive by analyzing the behavior of the 3-cell coupling fault,and we also analyze the faults in the same address,so a new test algorithm March 3 CL is proposed A 2048 X32 SRAM has been used for verifying March 3 CL by EDA tools,the result shows that this algorithm has the advantage of high fault coverage and short test time.
出处
《电子测试》
2017年第11X期50-52,47,共4页
Electronic Test
