ITO透明导电薄膜的制备及光电特性研究

Preparation and Characteristics of ITO Transparent Conductive Thin Films

论述了高温直流磁控反应溅射法制备ITO透明导电薄膜时氧分压、溅射气压和溅射电流等参数对其光电特性的影响 .当氧分压、溅射气压和溅射电流过高或过低时 ,会导致金属In ,InO ,SnO和Sn3 O4等物质以及晶体缺陷的生成 ,从而降低ITO薄膜的导电性或可见光透过率 ,甚至同时降低其光电性能 .实验结果表明 ,当Ar流量为 4 0 2cm3 ·min-1、温度为 36 0℃和旋转溅射时间为 90min等参数保持不变时 ,ITO薄膜光电特性最佳溅射参数的氧流量为 0 4 2cm3 ·min-1,溅射气压为 0 5Pa ,溅射电流 0 3A(溅射电压约为 2 4 5V ) ,所得薄膜的方块电阻为 5 7Ω、波长为 5 5 0nm的绿光透过率达到 88 6 % (洁净玻璃基底的绿光透光率为 91 6 % ) .

The effect on the electrical and optical properties is studied as ITO transparent conductive thin films prepared by DC magnetron reactive sputtering technique with different deposition parameters.These different deposition parameters consist of the oxygen partial pressure,the sputtering pressure and the sputtering electrical current.When the value of one of these different parameters is extreme,the electrical or optical property or both will be deteriorated,owning to the forming of Indium,InO,SnO,Sn_3O_4 and crystal defect.The perfect deposition parameters are as follows:oxygen flow of 0.42 cm 3·min -1 ,sputtering pressure of 0.5 Pa and sputtering current of 0.3 A(under sputtering voltage V _s=245 V),when some deposition parameters keep constant.The ITO thin film is obtained.It's sheet resistance is 5.7Ω and optical transmission is 88.6% under 550 nm wavelength (the optical transmission of uncoated glass is 91.6%).