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Superconductivity in Topological Semimetal θ-TaN at High Pressure

Superconductivity in Topological Semimetal θ-TaN at High Pressure
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摘要 Recently,θ-TaN was proposed to be a topological semimetal with a new type of triply degenerate nodal points.Here,we report studies of pressure dependence of transport,Raman spectroscopy and synchrotron x-ray diffraction on θ-TaN up to 61 GPa.We find that θ-TaN becomes superconductive above 24.6 GPa with Tc at 3.1 K.The θ-TaN is of n-type carrier nature with carrier density about 1.1 × 1020/cm3 at 1.2 GPa and 20 K, while the carrier density increases with the pressure and saturates at about 40 GPa in the measured range.However,there is no crystal structure transition with pressure up to 39 GPa,suggesting the topological nature of the pressure induced superconductivity. Recently,θ-TaN was proposed to be a topological semimetal with a new type of triply degenerate nodal points.Here,we report studies of pressure dependence of transport,Raman spectroscopy and synchrotron x-ray diffraction on θ-TaN up to 61 GPa.We find that θ-TaN becomes superconductive above 24.6 GPa with Tc at 3.1 K.The θ-TaN is of n-type carrier nature with carrier density about 1.1 × 1020/cm3 at 1.2 GPa and 20 K, while the carrier density increases with the pressure and saturates at about 40 GPa in the measured range.However,there is no crystal structure transition with pressure up to 39 GPa,suggesting the topological nature of the pressure induced superconductivity.
作者 Ya-Ting Jia Jian-Fa Zhao Si-Jia Zhang Shuang Yu Guang-Yang Dai Wen-Min Li Lei Duan Guo-Qiang Zhao Xian-Cheng Wang Xu Zheng Qing-Qing Liu You-Wen Long Zhi Li Xiao-Dong Li Hong-Ming Weng Run-Ze Yu Ri-Cheng Yu Chang-Qing Jin 贾雅婷;赵建发;张思佳;于爽;代光阳;李文敏;段磊;赵国强;望贤成;郑旭;刘清青;龙有文;李志;李晓东;翁红明;于润泽;禹日成;靳常青(Institute of Physics,Chinese Academy of Sciences,Beijing100190;School of Physics,University of Chinese Academy of Sciences,Beijing100190;Songshan Lake Materials Laboratory,Guangdong523808;School of Materials Science and Engineering,Nanjing University of Science and Technology,Nanjing210094;Institute of High Energy Physics,Chinese Academy of Sciences,Beijing100049)
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2019年第8期88-93,共6页 中国物理快报(英文版)
基金 Supported by the National Key Research and Development Program of China under Grant No 2018YFA0305701
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