摘要
GaN-based micro light emitting diodes(micro-LEDs) on silicon(Si)substrates with 40μm in diameter are developed utilizing standard photolithography and inductively coupled plasma etching techniques.From currentvoltage curves,the relatively low turn-on voltage of 2.8 V and low reverse leakage current in the order of 10-8 A/cm2 indicate good electrical characteristics.As the injection current increases,the electroluminescence emission wavelength hardly shifts at around 433 nm, and the relative external quantum efficiency slightly decays,because the impact of quantum-confined Stark effect is not serious in violet-blue micro-LEDs.Since GaN-LEDs are cost effective on large-area Si and suitable for substrate transfer or vertical device structures,the fabricated micro-LEDs on Si should have promising applications in the fields of high-resolution display and optical communication.
GaN-based micro light emitting diodes（micro-LEDs） on silicon（Si）substrates with 40μm in diameter are developed utilizing standard photolithography and inductively coupled plasma etching techniques.From currentvoltage curves,the relatively low turn-on voltage of 2.8 V and low reverse leakage current in the order of 10-8 A/cm2 indicate good electrical characteristics.As the injection current increases,the electroluminescence emission wavelength hardly shifts at around 433 nm, and the relative external quantum efficiency slightly decays,because the impact of quantum-confined Stark effect is not serious in violet-blue micro-LEDs.Since GaN-LEDs are cost effective on large-area Si and suitable for substrate transfer or vertical device structures,the fabricated micro-LEDs on Si should have promising applications in the fields of high-resolution display and optical communication.
基金
Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400100
the National Natural Science Foundation of China under Grant Nos 61674076,61674081 and 61605071
the Natural Science Foundation of Jiangsu Province under Grant Nos BY2013077,BK20141320 and BE2015111
the Six Talent Peaks Project of Jiangsu Province under Grant No XYDXX-081
the Open Fund of the State Key Laboratory on Integrated Optoelectronics under Grant No IOSKL2017KF03
the Fundamental Research Funds for the Central Universities
the Collaborative Innovation Center of Solid State Lighting and Energy-Saving Electronics
