摘要
We design and fabricate a good performance silicon photoconductive terahertz detector on sapphire substrates at room temperature.The best voltage responsivity of the detector is 6679 V/W at frequency 300 GHz as well as low voltage noise of 3.8 nV/Hz1/2 for noise equivalent power 0.57 pW/Hz1/2.The measured response time of the device is about 9μs,demonstrating that the detector has a speed of>110 kHz.The achieved good performance,together with large detector size(acceptance area is 3μm×160μm),simple structure,easy manufacturing method,compatibility with mature silicon technology,and suitability for large-scale fabrication of imaging arrays provide a promising approach to the development of sensitive terahertz room-temperature detectors.
作者
Xue-Hui Lu
Cheng-Bin Jing
Lian-Wei Wang
Jun-Hao Chu
鲁学会;敬承斌;王连卫;褚君浩(Key Laboratory of Polar Materials and Devices(Ministry of Ed ucation),Institute of Functional Materials,Department of Materials,School of Physics and Electronic Science,East China Normal University,Shanghai 200241;Shanghai Institute of Jn,elligen'Electronics&Systems,Fudan University,Shanghai 200433;State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083)
基金
Supported by the National Natural Science Foundation of China under Grant Nos 61775060 and 61275100
