一种高抗辐射的SOI电脉冲时间间隔测定电路

A SOI Electric Pulse Measure Circuit of Time Interval with Good Anti-radiation

研制出一种高抗辐射的 SOICMOS电脉冲时间间隔测定器集成电路。在阐述其工作原理的基础上 ,进行了抗辐射设计与版图设计。通过实验分析找到了向 SOI材料的 Si O2 埋层注入 F+ 离子的优化注入条件 ,有效地抑制 SOI CMOS器件的阈值电压的漂移 ,提高了电路的抗辐射性能。采用注入 F+离子 SOICMOS工艺投片后测试结果表明 :该电路与同类体硅电路相比 ,具有高速、低功耗。

In th is paper an anti radiation measure circuit of the electric pulse time interval by SOI CMOS technology is presented. Based on the description of circuit principle s, the layout design and anti radiation design are carried out. An optimized pr ocess for F + ion implating by experiments is introduced, which restrain the drift of the threshold voltage of SOI CMOS device and improve the anti radiatio n of the circuit. The chip is fabricated and tested by this process. The results show that the circuit has a good performance on speed, power dissipation and an ti radiation.