外延生长6H-SiC/Si薄膜的微结构研究

Microstructure of 6H-SiC Thin Films Grown on SiVia APCVD

采用 Si H4 -C3H8-H2 气体反应体系 ,通过 APCVD工艺在 Si(1 0 0 )衬底上进行 Si C薄膜生长时 ,严格控制缓冲层生长的工艺条件 ,即 1 3 0 0°C碳化温度较高的 C3H8饱和浓度 ,可以获得结晶质量良好的 6H-Si C单晶外延层。利用 SEM、X射线衍射能谱 (XRD)及光致发光谱 (PL)

SiC thin films h a ve been heteroepitaxially grown on Si(10 0) substrates via atmospheric pressure c hemical vapor deposition (APCVD) process with SiH 4 C 3H 8 H 2 reaction system. High quality single crystal 6H SiC films can be obtained under the condition of 1 300 °C of deposition temperature and a relatively higher saturation concentrat ion of C 3H 8. Microstructure of the epi taxial layer was determined by X ray dif fraction, SEM and Auger energy patterns. At the same time, a growth mechanism of the films was also discussed.