一种超大规模集成电路内部存储单元单粒子效应仿真评估方法

A SEU simulation method for the internal memory of VLSI

本文提出了针对抗辐射加固超大规模集成电路内部存储单元的单粒子翻转效应仿真方法,通过设计存储单元的单粒子翻转传播因子算法,可以模拟单粒子翻转在目标电路内部存储单元的产生、传播、掩蔽和捕获等过程,并预估对整体电路单粒子翻转截面的贡献.在此基础上开发了自动提取统计的仿真软件,开展了存储器内建自测试、典型功能模式下的重离子试验,仿真和试验结果具有相同的变化规律,误差小于1个数量级,表明该方法具有较高的仿真精度,可以应用于大规模集成电路的单粒子效应仿真.

This paper presents a way to simulate the Single Event Upset effect of anti-radiation hardening VLSI internal memory.The generation,propagation,masking and capture of the single event effect of the DUT internal memory can be estimated by designing the single event effect propagation factor algorithm of the memory unit,and the contribution to the SEU cross section of the whole circuit can be evaluated.On this basis,the simulation software of automatic extraction calculation was developed,and the heavy ion test under the MBIST and Typical Function mode were carried out.The results of simulation and experiment have the same variation rule,while the error is less than an order of magnitude.It is shown that the method has a high simulation accuracy and can be applied to the single event effect simulation of VLSI.