电绝缘用ta-C薄膜的微观结构与电学特性

Microstructure and electronic characteristics of ta - C films for insulator

采用ta-C薄膜用于SOI结构中的绝缘层,在高温高功率器件中有很大的应用潜力。应用真空磁过滤弧源沉积(FAD)的方法制备了ta-C薄膜。通过AFM、non-RBS、IR、I-V、C-V等方法对薄膜的表面形貌、微观结构和电学性能进行了研究。研究表明,ta-C薄膜的sp^3键含量高达87％,且具有很高的表面光洁度(粗糙度低于0.5nm)及较好的电绝缘性能,击穿场强达到4.7MV/cm。

Tetrahedral amorphous carbon (ta - C) thin films are promising to be the buried insulator for Silicon - On - Insulator (SOI) in high - power and high - temperature integrated circuits. Ta - C thin films were prepared by using filtered arc deposition (FAD) system. The surface morphology, microstructure and electronic characteristics of the ta - C thin films were studied through AFM, non -RBS, IR and I- V measurements. The ta - C films have high content of sp3 - bonds of carbon (87% ), display outstanding surface topography (low surface roughness with the Rms value under 0. 5 nm), and own excellent electrical property (breakdown field of 4. 7 MV/cm).