Au/Ti/W/Ti与n-GaAs欧姆接触的特性研究

Electrical and structural properties of Au/Ti/W/Ti ohmic contacts to n -GaAs

用磁控溅射系统和快速合金化法制备了Au/Ti/W/Ti多层金属和n-GaAs材料的欧姆接触,用传输线法对其比接触电阻进行了测试,并利用俄歇电子能谱(AES)和X射线衍射图谱(XRD)对接触的微观结构进行了研究。结果表明该接触在700℃时比接触电阻为1.5×10^(-4)Ω·cm^2,快速合金化后呈现欧姆特性可能与接触界面处生成的TiAs相有关。

Thermally stable ohmic contacts of Au/Ti/W/Ti on n - GaAs were fabricated using magnetic spattering unit and rapid thermal annealing. The electrical and structural properties of Au/Ti/W/Ti ohmic contacts were studied by measuring the contact resistivity and analyzing Auger Energy Spectrum (AES) and X -ray Diffraction (XRD) spectrum. Electrical measurement shows a minimum ohmic contact resistivity of 1. 5 μ10-4Ωcm2 at 700℃. It is found that a TiAs phase in the interface between metal multilayer and n - GaAs is responsible for the ohmic contact performance.