发射极δ掺杂的InGaAs/InP DHBT的特性分析

Analysis of the characteristics of DHBT with a δ - doping sheet in the emitter and composite collector

设计了一种新结构的InGaAs/InP双异质结晶体管(DHBT),其中发射结采用δ掺杂和阻挡层结构,集电极采用N^+掺杂复合结结构。考虑隧穿作用和发射结空间电荷区复合电流的影响,计算了δ掺杂浓度和N^+、n^-层厚度等参数变化对InGaAs/InP DHBT电流、I-V输出特性、电流增益的影响,计算结果表明,随着这些参数值增大,InGaAs/InP DHBT输出特性逐渐改善。当δ掺杂浓度大于2×10^(12)cm^(-3)时,电流增益趋于饱和。

A novel InGaAs/InP DHBT with a RRRR - doping sheet in the emitter and a N+ doping com -posite collector was designed. To analyze the characteristics of InGaAs/IhP DHBT, an analytical model is developed. Based on this model, the I - V characteristic, currents, and current gain are calculated. It is found that the I - V characteristics is improved with increasing the thickness of N+ layer and the doping concentration of N+ layer. When the 8 doping concentration is greater than 2 × 1012cm-3, current gain reaches a saturation value.