摘要
用射频溅射法制备了非晶态CoZr合金薄膜,在0.5Pa的氩气压下,可以得到性能优良的软磁薄膜。研究了非晶态CoZr膜的饱和磁化强度与Zr含量及温度的关系,发现对各种成分的非晶态CoZr膜,在很宽的温度范围内都可满足Bloch T^(3/2)定律。根据刚带模型计算出每个Zr原子向Co的3d能带转移的电荷数约为2.27。
The amorphous CoZr soft magnetic films with superior properties wereprepared by radio-frequency sputtering under pressure of 0.5 Pa Ar. The saturationmagnetization of the amorphous CoZr film with relation to the Zr content andtemperature was investigated. The amorphous CoZr films composed of differentconstituents obey the Bloch T^(3/2)-law in a wide range of temperatures. The numberof electrons transferred from each Zr atom to 3d energy band of Co calculatedby the rigid band model is about 2.27.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
1989年第6期B396-B399,共4页
Acta Metallurgica Sinica
关键词
非晶态合金
CoZr合金
薄膜
磁性
amorphous alloy
radio-frequency sputtering
perpendicular anisotropy
rigid band model
