期刊文献+

冷压印光刻工艺精密定位工作台的研制 被引量:5

High-Precision Orientation Stage for Room-Temperature Imprint Lithography
下载PDF
导出
摘要 冷压印光刻工艺是一种将模板图形翻制到硅片上的技术。为了获得高分辨率压印图形 ,为压印光刻机设计了一个精密定位工作台。精密定位工作台是压印光刻机的关键部件 ,它既能够保证模板 -抗蚀剂 -硅片结构间的接触均匀一致 ,并实现模板与承片台间的三个运动自由度 ,即沿 z轴的直线运动和绕 x、y轴的旋转运动 (α和β) ,又可以实现步进对准所需要的沿x、y轴的直线运动和绕 z轴的旋转运动 ( θ)。设计中采用了柔性机械结构 ,消除了使用铰链连接所引起的间隙与摩擦等问题。压印实验结果显示定位系统在 2 0 0 mm的行程中 ,精密定位工作台定位精度达到 8nm以内。实现了压印光刻工艺在集成电路制造中的高精度定位要求。 Room-temperature Imprint Lithography (IL) is a technique that uses the topography of a template to define the pattern created on the silicon substrate. A high-precision orientation stage was designed for high-resolution imprint machines. The high-precision orientation stage is the critical component of an imprint machine and the template's relative motion to wafer was analysed. Presence of sliding contacts in mechanical joints may cause wear, generate undesirable particles and lead to friction, so all joints were made with flexure mechanism. The high-precision orientation stage is with six degrees of freedom. It can be accomplished with one translation ( z displacement) and two tilting motions ( α and β ) to provide uniform intimate contact between the template and wafer surfaces. And also it can be accomplished with two translations ( x and y displacements) and one tilting motions (θ) between two flats to provide high orientation precision. Imprint experiments were performed and the positioning accuracy achieves within 8nm over 200 mm stroke.
出处 《中国机械工程》 EI CAS CSCD 北大核心 2004年第1期75-78,共4页 China Mechanical Engineering
基金 国家863高技术研究发展计划资助项目(2002AA420050 ) 国家自然科学基金资助项目 (50275118)
关键词 压印光刻 精密定位工作台 柔性结构 精度 imprint lithography high-precision orientation stage flexure mechanism precision
  • 相关文献

参考文献1

二级参考文献27

  • 1[1]International Technology Roadmap for Semiconductors,1999 Edition
  • 2[2]Ghani T,Mistry K,Packan P,et al.Asymmetric source/drain extension transistor structure for high performance sub-50nm gate length CMOS devices.Symp VLSI Tech Dig,2001:17
  • 3[3]Yu B,Wang H,Xiang Q,et al.Scaling towards 35nm gatelength CMOS.Symp VLSI Tech Dig,2001:9
  • 4[4]Holmes S J,Mitcheli P H,Hakey M.Manufacturing withDUV lithography.IBM J Res Develop,1997,41(1/2):7
  • 5[5]Chiu G L T,Shaw J M.Optical lithography:introduction.IBM J Res Develop,1997,41(1/2):3
  • 6[6]Rothschild M,Forte A R,Kunz R R,et al.Lithography at a wavelength of 193nm.IBM J Res Develop,1997,41(1/2):49
  • 7[7]Bloomstein T M,Rothschild M,Kunz R R,et al.Critical issues in 157nm lithography.J Vac Sci Technol,1998,B16(6):3153
  • 8[8]Gwyn C W,Stulen R,Sweeney D,et al.Extreme ultraviolet lithography.J Vac Sci Technol,1998,B16(6):3142
  • 9[9]Liddle J A,Berger S D,Biddick C J,et al.The scattering with angular limitation in projection electron-beam lithography (SCALPEL) system.Jpn J Appl Phys,1995,34(Part 1):6663
  • 10[10]Kamon K,Miyamoto T,Myoi Y,et al.Photolithography system using annular illumination.Jpn J Appl Phys,1991,30(Part 1):3012

共引文献43

同被引文献43

  • 1范细秋,张鸿海,胡晓峰,贾可,刘胜.宽范围高对准精度纳米压印样机的研制[J].中国机械工程,2005,16(z1):64-67. 被引量:4
  • 2雷兴华,谭永红,李若愚,谢扬球.光刻机工件台位移测量系统的设计与实现[J].桂林电子工业学院学报,2005,25(3):60-63. 被引量:4
  • 3刘彦伯,顾长庚,乌建中,朱兆颖.下一代实用光刻技术——纳米压印技术[J].机电一体化,2005,11(6):14-19. 被引量:9
  • 4Guo L J.Recent progress in nanoimprint technology and its applications[J].Journal of Physics D:Applied Physics,2004,37(2):123-141.
  • 5Schulz H,Pavlicek H,Reng N.Step and flash nanoimprint lithography in Europe[C] //2004 4th IEEE Conference on Nanotechnology.Munich,Germany,2004:655-656.
  • 6Choi B J,Sreenivasan S V,Johnson S,et al.Design of orientation stage for step and flash imprint lithography[J].Precision Engineering,2001,25(3):192-199.
  • 7Lee J J,Choi K B,Kim G H.Design and analysis of the single-step nanoimprinting lithography equipment for sub-100 nm linewidth[J].Current Applied Physics,2006,6(6):1007-1011.
  • 8Lee J J,Choi K B,Kim G H,et al.The UVnanoimprint lithography with multi-head nanoimprinting unit for sub-50nm half-pitch patterns[C] //SIC-EICASE International Joint Conference.Busan,Korea,2006:4902-4904.
  • 9Lan H B,Ding Y C,Liu H Z,et al.Review of the wafer stage for nanoimprint lithography[J].Microelectronic Engineering,2007,84(4):684-688.
  • 10Tian Y,Shirinzadeh B,Zhang D.A flexure-based mechanism and control methodology for ultra-precision turning operation[J].Precision Engineering,2009,33(2):160-166.

引证文献5

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部