阴极电沉积法制备高氮含量氮化碳薄膜

Preparation of Carbon Nitride Thin Films with High Nitrogen Content by Cathodic Electrodeposition

用双氰胺在乙腈中的溶液作沉积液 ,以镀有铟锡氧化物 (ITO)的导电玻璃为衬底 ,在阴极上制备了高氮含量的CNx 薄膜。XPS分析表明 ,薄膜最高氮碳原子比N/C为 1 2 2 (接近C3 N4中氮碳计量比 ) ,碳和氮主要以C—N、CN的形式成键。FTIR支持XPS的分析结果。拉曼光谱与大多数报道的氮化碳的拉曼光谱不同 ,在 10 98和 195 0cm -1处有 2个明显的峰 ,前者可归属为C—N ,后者可归属为 CN 。在 5 0℃、12 5 0V下得到的样品薄膜的纳米硬度为 11 31GPa ,弹性模量为 86GPa。提出了极化竞争反应机制 ,简要的解释了CNx

Carbon nitride films with high nitrogen content were obtained by cathodic electrodeposition onto glass substrates coated with indium tin oxide(ITO-coated glass) in solutions of dicyandiamide in acetonitrile. The XPS results showed that the maximum value of the N/C atomic ratio in the films was 1 22, close to the stoichiometric value of C 3N 4, and carbon-nitrogen bond forms were mainly C-N and CN, as confirmed by FTIR spectroscopy. In Raman spectrum there are two peaks at 1 098 cm -1 and 1 950 cm -1 corresponding to C-N and CN, which is seldom reported in literatures. The hardness and the Young′s modulus of the sample obtained at 50 ℃?1 250 V were 11 31 GPa and 86 GPa, respectively. A polarization-competition reaction mechanism is proposed to interpret the results obtained.