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OPTICAL SPECTRA OF LOW-DIMENSIONAL SEMICONDUCTORS

OPTICAL SPECTRA OF LOW-DIMENSIONAL SEMICONDUCTORS
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摘要 We have studied the optical spectra of low-dimensional semiconductor systems by calculating all possible optical transitions between electronic states. Optical absorption and emission have been obtained under different carrier population conditions and in different photon wavelengths. The line-shapes of the peaks in the optical spectrum are determined by the density of electronic states of the system, and the symmetries and intensities of these peaks can be improved by reducing the dimensionality of the system. Optical gain requires in general a population inversion, whereas for a quantum-dot system, there exists a threshold value of the population inversion. We have studied the optical spectra of low-dimensional semiconductor systems by calculating all possible optical transitions between electronic states. Optical absorption and emission have been obtained under different carrier population conditions and in different photon wavelengths. The line-shapes of the peaks in the optical spectrum are determined by the density of electronic states of the system, and the symmetries and intensities of these peaks can be improved by reducing the dimensionality of the system. Optical gain requires in general a population inversion, whereas for a quantum-dot system, there exists a threshold value of the population inversion.
出处 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2003年第6期401-405,共5页 Journal of Infrared and Millimeter Waves
关键词 光谱 低维半导体 光学增益 总体反转 数值分析 optical spectrum, low-dimensional semiconductor, optical gain, population inversion.
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参考文献14

  • 1Nalwa H S. Handbook of AdvancedElectronic and Photonic Materials and Devices. San Diego: Academic Press San Diego, 2000
  • 2Kim S, Razeghi M. Chapter 3 Recent advances in quantum dot optoelectronic devicesand future trends, Nalwa H S, In Handbook of Advanced Electronic and Photonic Materialsand Devices. San Diego: Academic Press San Diego 2000, 2: 133-154
  • 3Gunapala S D, Liu J K, Park J S. Et al.9-μm cutoff 256·256 GaAs/AlxGa1-xAsquantum well infrared photodetector hand-held camera. IEEE. Trans. Electron Dvices, 1997,44: 51-57
  • 4Asada M, Miyamoto Y, Suematsu Y. Gain and the threshold of three-dimensionalquantum-box lasers, J.Quantum Electronics, 1986, 22: 1915-1921
  • 5Fu Y, Willander M, Li Z F. et al. Dimensionality of photoluminescence spectrum ofGaAs/AlGaAs system. J. Appl. Phys, 2001, 89: 5112-5116
  • 6Fu Y, Willander M, Xu Wenlan. Optical absorption coefficients of semiconductorquantum-well infrared detectors. J. Appl. Phys, 1995, 77: 4648-4654
  • 7Fu Y, Zhao Q X, Ferdos F, et al. Strain and optical transitions in InAs quantumdots on (001) GaAs. Superlattices and Microstructures, 2001, 30: 205-213
  • 8Madelung O. Semiconductors Group IV Elements and Ⅲ-Ⅴ Compounds. Berlin:Springer-Verlag, 1991, 134
  • 9Coldren L A, Corzine S W. Diode Lasers and Photonic InteGrated Circuits. New York:John Wiley & Sons Inc. 1995,130
  • 10Yamada M, Ishiguro H. Gain calculation of undoped GaAs injection laser taking intoaccount of electron intra-band relaxation, Jpn. J. Appl. Phys., 1981, 20: 1279-1288

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