SiGe HBT的速度优化设计

Design Optimization of High-Speed SiGe Heterojunction Bipolar Transistors

从理论分析角度介绍了优化SiGe异质结晶体管速度的方法。结合双极晶体管的工艺限制,介绍了SiGeHBT的基本原理,讨论了SiGeHBT的发射区/基区/集电区设计。最后,以一个100GHzfmax和fT的HBT为例,对电路制作工艺参数进行了讨论。

Technologies for optimizing the speed of SiGe heterojunction bipolar transistors (HBT) are presented in the paper. Along with the process limitation of BJT technology, the operational principle of the SiGe HBT is described. And the design of emitter, base and collector of the SiGe HBT is dealt with in particular. Finally, process parameters of two HBTs, for which an f_(max) or f_T of 100 GHz have been achieved, are discussed.