电子束曝光UV3正性抗蚀剂的工艺研究

A Study of Electron Beam Lithography on UV3 Positive Resists

为了在体硅CMOSFinFET中用等离子体腐蚀精细凹槽图形,研究了将电子束直写曝光用于原为深紫外光学曝光的UV3正性抗蚀剂的工艺技术;详细分析了包括膜厚、曝光能量、曝光剂量、显影时间、设计尺寸和衬底材料等在内的各类工艺参数与实际曝光图形效果的关系;特别指出了曝光过程中特有的延迟效应及解决办法。采用最终的优化工艺条件,得到了合适的图形效果。

In order to etch fine groove patterns in bulk Si CMOS FinFET's, a process technology using electron beam direct writing on the UV3 positive resist, which is deep-violate-sensitive, is investigated in the paper. The dependence of the lithographical patterns on various process parameters, such as resist thickness, exposure energy and dosage, pre- and post-bake temperature, develop time, mask size and substrate material, is discussed in detail. The special exposing delay effect in this lithography process and its solution are described. A good groove pattern is achieved by optimizing process conditions.