铁电存储器在FPGA中应用的初步研究

A Fundamental Study on Application of FeRAM in FPGA

提出了一种全新的基于铁电存储器FeRAM编程的非挥发FPGA思想(概念),它主要是针对基于SRAM的FPGA的掉电挥发性问题提出的。文章在采用传统2T-2C结构的铁电存储单元的基础上完成数据的编程操作,并进一步对上述单元进行了电路和时序上的调整设计,提出了在FPGA工作环境下虽破坏性读出但无需回写的铁电存储单元。通过对文中提及的两种单元电路的仿真模拟,实现了编程数据的掉电保护、上电恢复的非挥发功能,初步验证了基于FeRAM编程的非挥发FPGA思想的正确性和可行性。

A new concept on non-volatile FPGA (NVFPGA) is proposed, which is base on FeRAM-Programming, instead of SRAM. Ferroelectric DRO 2T-2C memory cell is adopted for programming. To replace SRAM-programming, two types of cell circuits are put forward:1) modified 2T-2C cell based on traditional 2T-2C configuration, and 2) modified SRAM cell derived from SRAM and nonvolatile logic element. Simulations of the above cell circuits with numerical ferroelectric capacitor (fecap) model by HSPICE indicate the nonvolatile function of fecap's,validating the correctness and feasibility of non-volatile FPGA (NVFPGA).