新结构MOSFET 被引量：1

An Overview of MOSFET's with Novel Structures

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摘要　和传统平面结构MOSFET相比,新结构MOSFET具有更好的性能(如改善的沟道效应(SCE),理想的漏诱生势垒降低效应(DIBL)和亚阈值特性)和更大的驱动电流等。文章主要介绍了五种典型的新结构MOSFET,包括平面双栅MOSFET、FinFET、三栅MOSFET、环形栅MOSFET和竖直结构MOSFET。随着MOSFET向亚50nm等比例缩小,这些新结构器件将大有前途。 Compared with the traditional planar MOSFET's,MOSFET's with novel structures have better performance,such as improved SCE,ideal DIBL and sub-threshold slope,as well as higher driving ability. Five types of novel structured MOSFET's,including planar double-gate MOSFET's,FinFET's,tri-gate MOSFET's,gate-all-around MOSFET's and vertical MOSFET's,are described in the paper. As MOSFET's are scaling down to sub-50 nm,these devices are very promising.

作者林钢徐秋霞

机构地区中国科学院微电子中心

出处《微电子学》 CAS CSCD 北大核心 2003年第6期527-530,533,共5页 Microelectronics

关键词平面双栅MOSFET FINFET 三栅MOSFET 环形栅MOSFET 竖直结构MOSFET 集成电路 MOSFET Double-gate MOSFET Fin-FET Tri-gate MOSFET Gate-all-around MOSFET Vertical MOSFET

分类号 TN432 [电子电信—微电子学与固体电子学]

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同被引文献16

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新结构MOSFET 被引量：1

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