一种适合SOI全介质隔离电路的平坦化技术

A Planarization Technique for Fully Dielectrically Isolated SOI IC's

介绍了一种适合制作SOI全介质隔离电路的平坦化技术。该技术采用外延多晶硅回填隔离槽,并结合化学机械抛光,使SOI全介质隔离完成后形成的表面能达到单晶硅抛光材料的水平。该工艺适合制作某些具有特殊要求的集成电路、MEMS器件构件以及将电路和MEMS构件集成在同一硅片上的一体化加工。

A planarization technique is presented,in which the isolation trench is refilled with epitaxial polysilicon and chemical-mechanical polishing (CMP) is used to make the surface of the fully dielectrically isolated SOI as smooth as polished single-crystal Si wafers. This technique is applicable for manufacturing integrated circuits with special requirements,MEMS devices,and it is also suitable for processing of MEMS devices incorporated into IC's.