300mm圆片后抛光清洗——满足纳米微粒去除的挑战(英文)

300 mm Final polish clean - Meeting the nano -particle removal challenge

随着半导体制造关键尺寸的继续缩小,硅片表面清洗要求变得更加严格。当前这一要求包括有效地去除硅片表面的纳米微粒(<100nm),并控制主要金属杂质不超过1E+10原子/cm^2。传统的擦片机和兆声湿式批量清洗工艺面临达到这些目标的挑战。单片清洗澡机在硅片表面产生更加均匀的声强分布,更有效地去除了纳米微粒。介绍了湿式批量洗洗机和单片清洗澡机的兆声清洗效果。湿式批量浸泡术和兆声能量单片清洗机结合可以有效地去80mm磨料微粒。

As critical dimensions in semiconductor manufacturing continue to decrease, the blanket Si wafer cleaning requirements have continued to become more stringent. Today this includes effectively removing nano-particles (<100 nm) from wafer surfaces and controlling main metal impurities at or below 1E+10 atoms/cm2. Traditional scrubber and megasonic wet batch cleaning processes face a challenge to reach these targets.