半导体结构束缚下各向异性施主杂质中的混沌

Chaos in the Anisotropic Donor Impurity in a Semiconductor Structures

研究了各向异性施主杂质态和半导体结构束缚下,各向异性施主杂质态中电子运动的经典行为.研究发现:由于对称性发生了破缺,电子在原子附近的运动呈现了混沌特性.在半导体结构的作用下,原子附近的轨道在很短时间看有近似的规律,但长时间观察,运动仍是混沌的.如果体系的能量很大,电子逃离到离原子很远处,此时半导体结构开始起主导作用,混沌行为逐渐消失.根据计算结果和量子混沌理论可以定性地了解该模型高激发态的一些性质.

the classical behaviors of electoro movement in anisotropic donor impurity state without and within restriction of semiconductor structures was studied.Due to the breaking of the symmetry,electronic motion near the atom is chaotic.For a very high energy,the electron is far away from the atom and the semiconductor structures play an important role,chaos is vanishing gradually.The result can help to understand the high excited states.