摘要
综述了LCVD制备薄膜的原理和特性,国内外对LCVD的研究应用情况及目前最新的研究方向。阐明了LCVD技术在制备薄膜过程中的生长低温化及高精度膜厚的可控制性能等特点。分析了激光功率、反应室气压及基材预处理等参数对薄膜质量的影响。
The general principle and technology of laser induced chemical vapor deposition (LCVD) are summarized first. The latest developments and applications of LCVD technology in preparation of thin films are reviewed. The characteristics of low growth temperature and controllable high accurate thickness in the process are presented. The influence of laser intensity, gas pressure and substrate temperature on the quality of thin films is also analyzed.
出处
《安徽工业大学学报(自然科学版)》
CAS
2004年第1期7-10,22,共5页
Journal of Anhui University of Technology(Natural Science)
基金
安徽省教育厅自然科学基金资助项目(2002kj042)