氮化镓材料中的位错对材料物理性能的影响

Influence of Threading Dislocations on Physical Properties of GaN Epilayers

氮化镓材料中的位错是制约GaN发光器件及电子器件的性能的一个关键因素。目前对于氮化镓材料中的位错的研究是一大热点。扼要综述了位错对于材料及器件的物理性能的影响:非辐射复合作用、造成器件的漏电流、缩短器件的寿命。并简要介绍了减少GaN外延层中的位错密度的几种方法。

High-density threading dislocations (TD) as NR recombination centers have been one of the key factors limiting the internal quantum efficiency of radiative devices (eg. LEDs) and the performance of related electronic devices. In this article the influences of TD on the physical properlies of related devices are briefly reviewed.as well as some promising techniques to reduce the density of TD in GaN epilayers.