期刊文献+

纳机电探针阵列与压阻式传感器集成技术研究 被引量:1

Study on the nano electromechanical systems(NEMS) electro-thermal probe array integrated with piezoresistive sensor
下载PDF
导出
摘要 给出了纳机电探针阵列与压阻式传感器集成一维阵列器件结构及工作原理;通过理论计算得到该结构的一些主要的特性参数,计算结果与ANSYS模拟结果相符合;并运用微纳机械加工技术制造出该器件。该器件将加热电阻器、压阻式传感器和硅基针尖集成于在同一超薄微细悬臂梁,通过楔形开孔的机械切断,避免了加热电阻器高温处的PN结在高温下失去电隔离作用。室温下测得该器件加热电阻器的阻值为500~600Ω,压阻式传感器的力敏电阻器的阻值为6~8kΩ。 Structure of the NEMS electro-thermal probe array integrated with piezoresistive sensor and its fundmental working principle have been illustrated and the structure parameters have been gained by theoretic calculation,it is agreeable well to the ANSYS simulation result. Finally, the component has been fabricated by advanced silicon bulk micromachining technology. The thermal resistor is integrated with both the piezoresistive sensor and the silicon tip on a thin cantilever.In order to avoid the losing electrical insulation of PN junction on the heater at high temperature, a wedge hole is formed on the fore-part of cantilever. Tested resistance values of the heating resistor and the piezoresistive sensor are 500~600Ω and 6~8kΩ,respectively.
出处 《传感器技术》 CSCD 北大核心 2004年第1期73-76,共4页 Journal of Transducer Technology
基金 上海市纳米专项课题(0111NM077)
关键词 压阻式传感器 纳机电探针 集成 纳米探针 纳机电系统 integration nanometer-probe silicon nano electromechanical system(NEMS)
  • 相关文献

参考文献4

  • 1[1]Chui Benjamin W, Stowe Timothy D, Ju Yongho Sungtaek, et al.Low-stiffness silicon cantilevers and piezoresistive sensors for high-density AFM thermomechanical data storage[J].Journal of Microelectronechanical Systems, 1998,7(1):69-77.
  • 2[2]Vettiger P,Despont M,Drechsler U, et al.The "Millipede"-more than one thousand tips for future AFM data storage[J].IBM J RES DEVELOP, 2000,44(3):323-340.
  • 3[3]Mayer G K, Offereins H L, Sandmaier H,et al.Fabrication of non-underetched convex corners in anisotropic etching of (100)-silicon in aqueous KOH with respect to novel micromechanic elements[J]. J Electrochem Soc, 1990,137(12):3947-3951.
  • 4[4]Bao Min-hang.Micro mechanical transducers-pressure sensors ,accelerators and gyroscopes[M]. Duch Amsterdam Publisher,2000.222-223.

同被引文献32

  • 1U Staufer. Surface modification with a scanning proximity probe microscope [M]. Scanning Tunneling Microscopy Ⅱ,R Wiesendanger and H-J Guntherodt, Eds. Berlin, Germany, 1995. 273-302.
  • 2C F Quate. Manipulation and modification of nanometer scale objects with the STM [M]. Highlights in Condensed Matter Physics and Future Prospects, L Esaki, Ed. New York Plenum, 1991. 573-630.
  • 3R Barrett and C F Quate. Charge storage in nitride-oxidesilicon medium by scanning capacitance microscopy [J].Appl Phys Lett, 1991, 70 (5): 2725-2733.
  • 4Sumancgi T, Endo T, Kuwabam K. Nanoscale Layer Removal of Metal Surface by Scanning Probe Microscope Scratching [J]. J Vac Sci Technol, 1995, B13 (3): 1257-1260.
  • 5Sumomcgi T, Endo T, Kuwahara K. Micromachining of Metal Surfaces by Scanning Probe Microscopy [J]. J Vac Sci Technol, 1994, B12 (3):1876-1880.
  • 6Bhushan B, Koindar V N. Nanoindentation Hardness Measurements Using Atomic Force Microscopy [J]. Appl Phys Lett, 1994, 64:1653-1655.
  • 7Gobel H, Von Blanckenhagen P. Atomic Force Microscope as a Tool for Metal Surface Modifications [J]. J Vac Sci Technol, 1995, B13 (3):1247-1250.
  • 8Zhao Xingzhong, Bharnt Bhusban. Material removal mechanisms of single-crystal silicon on nanoscale and at ultralow loads [J]. Wear, 1998, 223: 66-78.
  • 9Binning G, Quate C F, Gerber Cb. Surface studies by scanning tunneling microscope [J]. Phys Rev Lett, 1982, 49(1):57-60.
  • 10C M Mate, G M McClelland, R Erlandsson, and S Chiang. Aromic-scale friction of a tungsten tip on a graphite surface [J]. Physic Rev Lett , 59(17): 1942-1945.

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部