固定态TiO_2薄膜制备及光催化氧化性能研究

Preparation of fixed TiO_2 film and performance of photocatalytic oxidation

以TAI钛合金为原料,在不同的成膜电压及电流密度下,用阳极氧化法在基体表面原位生长TiO_2薄膜,应用于光催化氧化及光电催化氧化反应体系降解水中的罗丹明B.采用X射线衍射法和扫描电镜对薄膜的粒径、物相进行了表征。结果表明:当成膜电压为160V,电流密度为160mA/cm^2时,薄膜中二氧化钛晶型以锐钛矿型为主,粒径45～50nm;在光催化氧化水中罗丹明B的实验中,90min去除率达到93.5％,该薄膜表现了很好的光催化活性;同时,外加一定的偏压,在降解的最初60min时,外加偏压0.6V比未加偏压(0V)的薄膜电极罗丹明B的去除率提高了33.4％,表明外加偏压可以提高光催化氧化的效率。

Titanium dioxide films can grow in original position on TAl alloy by using the anodisation methods at different voltages and current densities. Rhodamine B can be degraded in photocatalytic (PC) and photoelectrocatalytic (PEC) oxidation reaction system. The morphology and phase composition of film were analyzed by SEM and XRD. The results indicate that TiO2 in the film is mainly composed of anatase at 160 V and 160 mA/cm2. The grainsize of TiO2 is about 45-50 nm. During photocatalytic degradation of Rhodamine B, the removal rate goes up to 93.5 percent in 90 minutes, which indicates a high photocatalytic activity in these films. At the same time, the removal rate of Rhodamine B by 0.6 V external voltage is 33.4 percent higher than that by 0 V external voltage during the degradation of first 60 minutes, which indicates the efficiency of photocatalytic can be increased by external definite voltage.