基于量子微扰的AlGaN/GaN异质结波函数半解析求解

AlGaN/GaN heterojunction wavefunction half analytic model based on quantum disturbance

基于量子力学微扰理论的分析 ,得到AlGaN GaN异质结波函数的半解析模型 .给出了模型的理论分析和计算结果 .对于相同问题 ,给出了与差分算法的对照结果 .与传统的差分方法相比 ,半解析方法具有收敛性强、大规模问题计算效率高的特点 ,更适合作为AlGaN GaN异质结量子阱的求解算法 .

Based on the quantum disturbance theory, a half-analytic model was achieved that can be used in the calculation of the eigen function and eigen energy of the two-dimensional electron gas in a AlGaN/GaN heterojunction. The theoretical analysis and calculation result of the model were given. The calculation result was compared with that of the difference method. The method in this paper is superior to the difference method when solving a large-scale problem because of its convergence and efficiency and is well fitted for the calculation of the quantum well problem in the AlGaN/GaN heterostructure.