摘要
研究了掺CoO、Nb2O5、La2O3的SnO2基压敏陶瓷,在25~300℃范围内的电特性.用尼奎斯特图表示了阻抗数据,结果表明:制备的样品有2个时间常数,分别代表两种激活能,一个在低频,一个在高频.这些激活能与晶界氧的吸附及氧与晶粒边界的作用有关,在晶界吸附的O′和O〞作为受主态,有利于形成肖特基势垒.
The electrical properties of SnO2-based varistor system doped with SnO2, Nb2O5, Co2O3, and La2O3 were investigated by impedance spectrum measurement at 25℃ to 300℃.The impedance data show that the samples exhibit two time-constants, one at low frequency and the other at high frequency. They represent two different kinds of activating energy respectively. The activating energy is associated with adsorption and reaction of O2 at the grain boundary. When O and O″ absorbed by grain boundary as acceptors, it is helpful to the formation of Shottky barriers.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2003年第12期22-23,26,共3页
Electronic Components And Materials
