低温异质生长SiC薄膜预处理工艺研究

Study on Pretreatment Technology for SiC Thin Films Growing at Lower Temperature

讨论了在热丝化学汽相沉积(HFCVD)法沿Si(111)晶面异质生长SiC薄膜的过程中,预处理工艺对SiC成膜的影响.采用硅烷、甲烷作为反应气源,利用X射线衍射(XRD)、扫描电子显微分析(SEM)等分析手段,进行预处理工艺的研究.获得了在低温下700~800℃制备高质量SiC薄膜的预处理工艺参数:热丝碳化温度2 000℃;HF酸蚀30 s;H2刻蚀10 min.

Discussed is the influence of pretreatment technology in the course of SiC/Si films of hetero-structure growing on on-axis Si(111) substrate by the method of hot filament chemical vapor deposition (HFCVD). The technology is investigated with silane and methane as source gas and analyzed by X-Ray Diffraction and Scanning Electron Microscopy. The obtained optimized conditions are: temperature of carbonized hot filament 2 000℃, HF corrosion 30 seconds and H2 etching 10 minutes.