空间电荷区和晶界复合对多晶太阳电池基区少数载流子寿命的影响

INFLUENCE OF CARRIER RECOMBINATION IN THE SPACE CHARGE REGION AND INGRAIN BOUNDARIES ON MINORITY CARRIER LIFETIME IN THE BASE REGION OF POLYSILICON SOLAR CELLS

该文采用多晶硅太阳电池模型,通过引入空间电荷区复合速度来研究空间电荷区复合对少子寿命的影响,从计算结果中发现当复合速率大于105cm/s时,空间电荷区的复合影响不可忽略,必须对所测得的寿命值进行修正。

The open circuit voltage decay (OCVD) is one common method measuring minority carrier lifetime in PV research. But when measuring minority lifetime, only few papers have reported the influence of carrier recombination in the space charge region on minority carrier lifetime in the base region of solar cells. The interface recombination velocity Si is introduced to reflect the effect of recombination in space charge region on minority lifetime with polysilicon model considered. According to the computed results, if Si is higher than 105 cm/s, the influence of recombination in the space charge region can't be neglected and the lifetime value measured by OCVD must be corrected.