摘要
研究了用于高效ZnSe/GaAs/Ge(硒化锌/砷化镓/锗)级联太阳电池顶电池的ZnSe材料。用MBE技术制备了ZnSep n结样品,测量了其外量子效率;提出了改进ZnSe顶电池性能的方法;分析了ZnSe/GaAs/Ge结构比GaInP/GaAs/Ge结构的优越之处。
ZnSe is used as the top cell of high efficiency ZnSe/GaAs/Ge tandem solar cells is studied. The sample of ZnSe p-n junction was prepared by MBE (Molecular Beam Epitaxy) technology, and its external QE (quantum efficiency) was measured; the improvement of ZnSe top cell performance was discussed; the advantages of ZnSe/GaAs/Ge structure over GaInP/GaAs/Ge structure was analyzed.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2003年第5期668-671,共4页
Acta Energiae Solaris Sinica
关键词
级联太阳电池
ZnSe顶电池
肖特基(Schottky)结
Heterojunctions
Molecular beam epitaxy
Schottky barrier diodes
Solar cell arrays
Solar cells
Solar radiation
