烧绿石结构La_2Zr_2O_7薄膜的外延生长研究

Study on Epitaxial Growth of Pyrochlore Structure of La_2Zr_2O_7 Thin Film

利用化学溶液沉积(CSD)法在双轴织构的Ni W基带上制备了烧绿石结构的La2Zr2O7(LZO)氧化物薄膜,并研究了热处理过程中升温路线对其外延生长行为的影响.利用X射线衍射(XRD)和原子力显微镜(AFM)对不同热处理路线下所制得的LZO薄膜的织构和表面形貌进行了表征.结果表明:升温速率对LZO薄膜的织构度以及表面形貌影响较大.可以认为通过选择合适的热处理路线,利用CSD法可以制得具有锐利织构度、表面平整且无明显缺陷的LZO薄膜,同时,在最佳热处理条件下制得的LZO薄膜适合用作涂层导体缓冲层.

In this paper,The La2Zr2O7( LZO) oxide thin film with pyrochlore structure was fabricated on bi-axial textured Ni W substrates by chemical solution deposition( CSD)method,and the influence of elevated temperature routes on epitaxial growth behavior of LZO films during the heat-treatment process was studied. The texture and surface morphology of LZO thin films under different heat treatments were characterized by X-ray diffraction( XRD) and atomic force microscopy( AFM). The result indicates that the elevated temperature rate has an important effect on the texture degree and surface morphology of LZO thin films on metallic substrates. It can be considered that LZO thin films with sharp texture degree and smooth surface could be obtained by choosing an appropriate heat-treatment route using CSD method. Moreo-ver,LZO thin film fabricated at the optimal heat-treatment condition is suitable to be used as the buffer layer for coated conductors.