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碳纳米管模板法制备碳化钨纳米棒的可行性研究 被引量:2

On the Preparation of Tungsten Carbide Nanorods by Carbon Nanotube Template-medlated Growth
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摘要 采用碳纳米纤维管,WO3和I2为原料对碳纳米管模板法制备碳化钨纳米棒的可行性进行了研究,并对其制备原理进行了分析,提出了因碳纳米管产生的隧道效应,挥发性钨源被不断吸入纳米管内并与管壁发生碳化反应生成碳化钨棒的反应模型;在实验结果的基础上,进一步提出了纳米棒强化的新概念硬质合金的制备新方案。 Using carbon nanofibers with open ends, WO3 and I2 as starting materials, the experiment of preparing tungsten carbide nanorods is carried out and the principle of carbon nanotube template-mediated growth is analyzed. It is pointed out that it is because of the tunnel effect of nanotube that volatile tungsten source is drawn into the tube continuously and then reacts with the wall of carbon nanotube, as a result, tungsten carbide nanorods can be formed. Based on the experiment result, how to prepare nanorods strengthened new concept cemented carbide is discussed.
出处 《硬质合金》 CAS 2003年第4期193-196,共4页 Cemented Carbides
基金 国家留学基金委资助。
关键词 碳纳米管 模板法 制备 碳化钨纳米棒 可行性研究 硬质合金 carbon nanofibers, tungsten nanorods, nanorods strengthened cemented carbide
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  • 1沈龙.印制电路板用的新玻璃成分[J].玻璃纤维,2002(3):14-17. 被引量:22
  • 2[2]L.H.Liang, G.W.Meng, W.Chen, et al. Growth and characterization of TiC nanorods activated by nickel nanoparticles. Journal of Crystal Growth, 2000, 220:296-300
  • 3[3]Han Weiqiang, Fan Shoushan, Li Qunqing, et al. Continuous synthesis and characterization of silicon carbide nanorods.Chemical Physics Letters, 1997, 265( 3-5): 374-378
  • 4[4]X.T.Zhou, H.L. Lai, H.Y.Peng, et al. Thin β-SiC nanorods and their field emission. Chemical Physics Letters, 2000, 318(1-3):58-62
  • 5[5]Lieber Charles M, Wong Eric. Preparation of carbide nanorods. US Patent, No.5997832
  • 6[6]Lieber Charles M, Dai Hongjie. Carbide nanomaterials. US Patent, No.6190634
  • 7[7]http://www.electrovac.com
  • 8[8]M.Lenz, R.Gruehn. Developments in measuring and calculating chemical vapor transport phenomena demonstrated on Cr, Mo,W and their compounds. Chemical Review, 1997, 97: 2967-2994
  • 9[9]Philip Ball. Roll up for the revolution. Nature, 2001, 414:142-144
  • 10[10]Bonneau Maxime,Chardon Nicolas,Andersson Sara,et al.Method of making metal composite powders. US Patent, No. 5,529,804

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  • 1朱英杰,钱逸泰,张曼维,陈祖耀.γ射线辐照-溶胶凝胶法制备非晶SiO_2-Ag纳米复合材料[J].科学通报,1994,39(15):1440-1440. 被引量:3
  • 2[6]O I Micic, J R Sprague, C J Curtis, et al. Synthesis and Characterization of InP, GaP, and GalnP2 Quantum Dots[J]. J. Phys.Chem., 1995, 99(19): 7754-7759.
  • 3[7]A A Guzelian, J E B Katari, A V Kadavanich, et al. Synthesis of Size-Selected, Surface-Passivated InP Nanocrystals[J]. J. Phys.Chem., 1996, 100(17): 7212-7219.
  • 4[8]S Banerjee, S S Yoon. In-Situ Growth of Fused Ozonized Single-Walled Carbon Nanotubes - CdTe Quantum Dot Junctions[J].Adv. Mater., 2004, 16(1): 34-37.
  • 5[10]K Woo,H J Lee,J PAhn,et al.Sol-Gel Mediated Synthesis ofFe2O3 Nanorods[J].Adv.Mater.,2003,15(20):1761-1764.
  • 6[12]W Z Wang, Y Geng, P Yan, et al. A Novel Mild Route to Nanocrystalline Selenides at Room Temperature[J]. J. Am. Chem.Soc., 1999, 121(16): 4062-4063.
  • 7[13]S H Yu, Y S Wu, J Yang, et al. A Novel Solventothermal Synthetic Route to Nanocrystalline CdE (E=S, Se, Te) and Morphological Control [J]. Chem. Mater., 1998, 10(9): 2309-2312.
  • 8[14]D Routkevitch, T Bigioni, M Moskovits, et al. Electrochemical Fabrication of CdS Nanowire Arrays in Porous Anodic Aluminum Oxide Templates[J]. J. Phys. Chem., 1996, 100(33): 14037-14047.
  • 9[16]Y D Li, H Liao, Y Ding, et al. Solvothermal Elemental Direct Reactionto CdE (E= S, Se, Te) Semiconductor Nanorod[J].Inorg. Chem., 1999, 38(7): 1382-1387.
  • 10[17]Y D Li, H W Liao, Y Ding, et al. Nonaqueous Synthesis ofCdS Nanorod Semiconductor[J]. Chem. Mater., 1998, 10(9):2301-2303.

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