碳化硅紫外探测器的研究

A Study of Silicon Carbide Ultraviolet Detectors

采用宽禁带半导体n 4H SiC和金属Au作肖特基接触 ,TiNiAg合金作背底形成欧姆接触 ,研制出Au/n 4H SiC肖特基紫外探测器 .测试分析了该器件的光谱响应特性 :响应范围为 2 0 0～ 4 0 0nm之间 ;在室温无偏压下 ,响应峰值在 31 0nm处 ,响应半宽为 85nm .同时测试分析了该器件的I V特性 :在室温下 ,正向开启电压为 0 .8V ,反向击穿电压大于 2 0 0V ,反向漏电流小于 1 0 -10 A ;工作温度大于 2 50℃ .实验表明 ,Au/n 4H

With wide band semiconductor n 4H SiC and metal Au used to form Schottky contact, and with alloys TiNiAg used to form ohmic contact on the back, Au/n 4H SiC Schottky UV detectors have been fabricated. The spectrum response characteristics of the devices have been measured and analyzed. The response wavelength range is from 200 nm to 400 nm. At room temperature without biased voltage, the response peak has been found at 310 nm and the half width of response wavelength is 85 nm. The I V characteristics have also been measured. At room temperature, the forward turn on voltage is 0.8 V, the reverse breakdown voltage is higher than 200 V , and the leakage current is smaller than 10 -10 A. The devices can work at a temperature higher than 250 ℃. The measurement results show that Au/n 4H SiC Schottky UV detectors have good UV response characteristics and lower leakage current.