射频反应性溅射Cd-Sn合金靶沉积透明导电Cd_2SnO_4薄膜

TRANSPARENT CONDUCTING CADMIUM-TIN OXIDE FILMS DEPOSITED BY RF REACTIVE SPUTTERING FROM A Cd-Sn ALLOY TARGET

在Ar+O_2混合气氛中射频反应性溅射Cd-Sn合金靶制备了透明导电Cd_2SnO_4(简称CTO)膜。实验表明,该膜的电学和光学性质依赖于混合气体中的氧浓度和衬底温度,最低电阻率为2.89×10^(-6)Ω·m,可见光区域最高透光率为95％。用X射线衍射测量了不同衬底温度下薄膜的结构。

Transparent conducting films of cadmium-tin oxide were prepared by rf reactive sputtering from a Cd-Sn alloy target in an Ar + O2 atmosphere. The electrical and optical properties of the films depend on the oxygen concentration in the gas mixture and the substrate temperature. The lowest resistivity is 2.89×10-6Ω·m and the highest optical transmissivity is 95% over the visible region. The structure of the films under different substrate temperatures was examined by X-ray diffraction.