掺铒硫化锌ACTFEL中深能级的测定

Determination of Deep Centers in ZnS:Er^(3+) ACTFEL

采用热激电流(TSC)法,在180-430K温度内对三种不同结构的ZnS:Er^(3+)交流薄膜电致发光(ACTFEL)样品,测得三个热激电流峰.经分析认为它们对应于ZnS:Er^(3+)层体内,ZnS:Er^(3+) Y_2O_3和ZnS:Er^(3+)-SnO_2界面处存在的不同深度的陷阱能级.估算其位置和密度,并讨论了实验结果.

In this report, three thermally stimulated current (ISC) peaks have been observed in the temperature range 80K to 430K for three ZnS : Er3+ AC electroluminescent thin film (ACTFEL) samples with different structures It was concluded that there are three deep centers with different trap depths in the ZnS : Er3+ bulk layer, corresponding to the interface between ZnS : Er3+ and Y2O3 or between ZnS : Er3 + and SnQ2. Their Positions and densities have been estimated, and the related effects are also discussed.