摘要
理论表明,当流过SiC肖特基势垒二极管的正向电流恒定时,在一定温度范围内,器件两端的正向压降与温度变化之间存在线性关系。利用此特性,可以制造SiC高温温度传感器。阐述了SiC高温温度传感器的工作原理、结构特点和工艺过程,介绍了传感器系统的结构。系统的测温范围在0~500℃,测量准确度可达0.5℃。
Theories show,when the forward current through the SiC Schottky barrier diode is constant,in a wide temperature range the forward voltage drop of the device has a linear function with the temperature change.According to this feature,SiC high temperature sensor can be made.Then the working principles,structure and the technology process of this kind of sensor and its system are introduced.This sensor system operates over a temperature range from 0~500℃,and its measurement accuracy can reach 0.5℃.
出处
《传感器技术》
CSCD
北大核心
2003年第12期32-33,39,共3页
Journal of Transducer Technology
基金
国家自然科学基金资助项目(50132040)
中国科学院创新项目(KJCX2-SW-04)