摘要
本文首先讨论通过渐变方式使异质结处的尖峰消失或减小,从而改善高亮度发光二极管(HB-LED)的器件性能。讨论在实际中用双层突变拟合缓变异质结遇到的问题.
Graded heterojunctions with different grading way and different doping density were analysized to show the spike at the heterojunction which can be removed or decreased to improve the performance of HB-LED. We discussed the problems that were met when we applied the double abrupt-hetero layer to fit the grading heterojunction in HB-LED.
出处
《量子电子学报》
CAS
CSCD
北大核心
2003年第6期689-698,共10页
Chinese Journal of Quantum Electronics
基金
广州市科技重点计划资金(1999-z-035-01)
