摘要
首先采用化学气相沉积法成功制备半导体氧化镓(Ga2O3)纳米线,并通过X射线衍射、扫描电镜、透射电镜等检测手段对其形貌、结构和尺寸进行了表征.进而利用一种简易的探针刻划法制作了基于Ga2O3纳米线的日盲型紫外探测原型器件,光电测试表明,该器件对254nm的紫外光具有快速灵敏的响应特性,最后讨论了Ga2O3纳米线紫外响应的微观机理.
Ga2O3nanowires were synthesized by the chemical vapor deposition method.The product was characterized by X-ray diffraction,scanning electron microscopy and transmission electron microscopy. Then,a new simple scratching technique was used to fabricate the solar-blind ultraviolet detector based on Ga2O3nanowires.Photoelectric detection showed that the fabricated detector had a high selectivity and a fast response to 254nm light.Finally,the corresponding microcosmic mechanism of the ultraviolet photoresponse of Ga2O3nanowires was discussed.
出处
《西南大学学报（自然科学版）》
CAS
CSCD
北大核心
2014年第3期167-171,共5页
Journal of Southwest University(Natural Science Edition)
基金
国家自然科学基金资助项目(51101129和11204246)
