硅压阻式低压传感器研制

DEVELOPMENT OF SILICON PIEZORESISTIVE LOW PRESSURE TRANSDUCERS

以各向异性腐蚀技术制造的矩形硅膜片为弹性敏感元件,研制了硅压阻式低压传感器。通过对矩形硅膜上应力分布的分析和计算,确定了力敏电阻的最佳位置和尺寸。压敏电阻全桥采用集成电路技术制作在2.5mm×5.5mm、厚35μm的矩形硅膜片上。在0～20kPa压力范围内,测得577μV/kPa·V的灵敏度,理论和实验结果有较好的一致性。

With a thin silicon diaphragm fabricated by anisotropic ething technique:as an elastic element, a piezoresistive low-pressure transducer has been developed successfully. The dimensions and positions of piezoresistors have been optimized through the analysis and calculations of stress distribution on the rectangular diaphragm. The full bridge of piezoresistors has been fabricated on a 2.5×5.5×0.035mm^3 diaphragm. The pressure sensitivity of 577μV/ kPa·V has been measured. Theoretical and experimental results are in good agreement.