重掺砷硅单晶中痕量硼的二次离子质谱定量分析

Measurement of Boron in As Heavily Doped Silicon Crystal by Secondary Ion Mass Spectrometry

重掺砷硅单晶中杂质硼含量的控制是十分关键的,因无法用常规的红外光谱法测试,于是转而使用二次离子质谱法来测试.虽然二次离子发射机理复杂,基体效应明显,但通过相对灵敏度因子法,还是能够比较精确地给出定量测试结果,解决重掺砷硅单晶中硼杂质的定量检测问题,进而为控制硼含量提供了依据和帮助.

It is critical for the As heavily doped silicon crystal to control the contamination of B which can't be measured by usual IR-Absorption Spectrometry. But by Secondary Ion Mass Spectrometry(SIMS) it can be measured, although the emission mechanics of the secondary ion is complex and the matrix effect is strong. SIMS can quantify the contamination of B in an accepted precision by the way of RSF calculation. It solves the problem of B's quantification measurement and offers great help to the process of B control. The B contamination quantification test method of SIMS by RSF in the As heavily doped silicon crystal and evaluate the effectiveness of this method in industry are described.