基于二氧化钒薄膜的太赫兹开关器件

Terahertz switching device based on vanadium dioxide thin film

二氧化钒(VO2)作为一种优质的光电功能材料一直备受人们的关注,在信息存储、光调制器、太阳能电池、光电探测器等方面有着重要应用。采用磁控溅射及原位退火氧化的"两步法"制备了VO2薄膜,并对其进行晶态、形貌表征。设计并搭建VO2薄膜热致相变实验系统,研究了VO2薄膜在变温条件下对2.52 THz辐射的开关特性。结果表明,VO2薄膜样品为多晶态,具有明显的太赫兹调制效果,可以实现对2.52 THz波的调制,并可作为太赫兹开关/调制器件的功能材料。

As a high-quality optoelectronic material, vanadium dioxide(VO2) has drawn much attention over the past years, and it shows great potential for various applications such as information storage device, optical modulator, energy-saving, infrared detector, etc. In this work, nanocrystalline VO2 thin films are prepared by reactive direct current magnetron sputtering and in-situ oxidation annealing, and the microstructures and optical properties of films are investigated. In order to study the switching characteristic of VO2 thin film to 2.52 THz radiation under varied temperature conditions, the corresponding testing system is established. The results show that the VO2 thin film is polycrystalline, exhibiting obvious modulation effect on the terahertz wave at 2.52 THz, which makes VO2 thin film a promising functional material for the terahertz switching/modulation devices.