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基于SOS的高重频高压纳秒脉冲源设计 被引量:3

Design of the high repetition high voltage nanosecond pulse generator based on SOS
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摘要 依据高重频高压纳秒脉冲输出的要求,基于半导体断路开关(SOS)的工作特点,设计了高重频高压纳秒脉冲源脉冲发生器线路。分析发生器线路的工作原理,对输出脉冲幅度50 k V/100Ω、脉宽约10 ns^20 ns和重复频率100 k Hz脉冲源的线路中关键器件的参数进行了计算。分析关键器件SOS、饱和脉冲变压器、副开关要求,给出了关键器件的选型参考。 A design scheme is put forward according to the characteristic of high-repetition high-voltage nanosecond output wave and the operation characteristic of Semiconductor Open Switch(SOS), which generates special pulse wave by SOS. The operation process of the circuit is analyzed. Parameters of some important components in generator which can output 50 k V/100 Ω, 10 ns-20 ns and 100 k Hz pulse wave are computed. Through analyzing the requirements on some important components including SOS, saturated transformer and subsidiary switch, an advice is presented on how to select these important components.
出处 《太赫兹科学与电子信息学报》 2016年第1期122-126,共5页 Journal of Terahertz Science and Electronic Information Technology
基金 中国工程物理研究院重点基金资助项目(2013A0402021)
关键词 高重频高压纳秒脉冲 半导体断路开关 脉冲源 饱和脉冲变压器 high repetition high voltage nanosecond pulse Semiconductor Opening Switch pulse generator saturable transformer
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参考文献11

  • 1江伟华.高重复频率脉冲功率技术及其应用:(1)概述[J].强激光与粒子束,2012,24(1):10-15. 被引量:39
  • 2Rukin S,Lyubutin S,Ponomarev A et al.Solid-state IGBT/SOS-based generator with 100-kHz pulse repetition frequency. 16th IEEE International Pulsed Power Conference . 2007
  • 3苏建仓,丁永忠,宋志敏,丁臻捷,刘国治,刘纯亮.半导体断路开关实验研究[J].强激光与粒子束,2002,14(6):949-953. 被引量:10
  • 4Mesyats,Rukin GA,Lyubutin SN, et al.Semiconductor opening switch research at IEP. Pulsed power conference . 1995
  • 5BARNES M J,Wait G D,DILLING J,et al.A high frequency mosfet driver for the titant facility at TRIUMF. IEEE International Pulsed Power Conference . 2005
  • 6Lyubutin S.K,Mesyats, G.A. et al.Subnanosecond high-density current interruption in SOS diodes. Pulsed Power Conference . 1997
  • 7Rukin S N,Mesyats G A,Ponomarev,et al.Megavolt repetitive SOS-based generator. IEEE Conference on Pulsed Power Plasma Science . 2001
  • 8Barnes, M.J.,Wait, G.D.A 25-kV 75-kHz kicker for measurement of muon lifetime. Plasma Science, IEEE Transactions on . 2004
  • 9Bernius, Mark T.,Chutjian, Ara.High‐voltage, full‐floating 10‐MHz square‐wave generator with phase control. The Review of Scientific Instruments . 1989
  • 10杨勇,刘英坤,崔占东,刘忠山,马红梅,陈洪斌.特种快速大功率半导体切断开关的研制[J].半导体技术,2009,34(3):244-246. 被引量:2

二级参考文献29

  • 1KOTOV Y A, MESYATSETAL G B, RUKIN S N, et al. A novel nanosecond semiconductor opening switch for megavoh repetitive pulsed power technology: experiment and apphcations [C] // Ⅸ IEEE Int Pulsed Power Conf. Albuquerque, NM, USA, 1993 : 134.
  • 2RUKIN S N, KOTOV Y A, MESYATSETAL G A. Pulsed power accelerator technology based on solid-state semiconductor opening switches (SOS) [C]//10^th Int Conf on High Power Particle Beams. San Diego, CA, 1994 : 124.
  • 3LYUBUTIN S K, MESYATS G A, RUKIN S N, et al. Repetitive nanosecond all-solid-state pulsers based on SOS diodes [ C]// Ⅺ IEEE Int Pulsed Power Conf. Baltimore, Maryland, USA, 1997 : 992.
  • 4Neau E L. Environmental and industrial applications of pulsed power systems[J]. IEEE Trans on Plasma Science, 1994, 22:2-10.
  • 5Jiang W, Yatsui K, Takayama K, et al. Compact solid state-switched pulsed power and its applications[J]. Proc of the IEEE, 2004, 92 (7) : 1180-1196.
  • 6Akiyama H, Sakugawa T, Namihira T, et al. Industrial applications of pulsed power technology[J]. IEEE Trans on Dielectrics and Electrical Insulation, 2007, 14(5) : 1051-1064.
  • 7Mankowski J, Kristiansen M. A review of short pulse generator technology[J].IEEE Trans on Plasma Science, 2000, 28(1):102-108.
  • 8Buttram M. Some future directions for repetitive pulsed power[J]. IEEE Trans on Plasma Science, 2002, 30(1) :262-266.
  • 9Ogawa K, Sasago M, Endo M, et al. A KrF excimer laser lithography for half micron devices[J].J pn J Appl Phys, 1988, 27(8):1521-1525.
  • 10Kakizaki K, Sasaki Y, Inoue T, et al. High-repetition-rate (6 kHz) and long-pulse-duration (50 ns) ArF excimer laser for sub-65 nm lithography[J]. Review of Scientific Instruments, 2006, 77:035109.

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