摘要
The mathematical model of semiconductor devices is described by the initial boundary value problem of a system of three nonlinear partial differential equations.One equation in elliptic form is for the electrostatic potential;two equations of convection-dominated diffusion type are for the electron and hole concentrations.Finite volume element procedure are put forward for the electrostatic potential,while upwind volume element schemes for the two concentration equations.Error estimates in L2norm for our numerical schemes are derived.
The mathematical model of semiconductor devices is described by the initial boundary value problem of a system of three nonlinear partial differential equations. One equation in elliptic form is for the electrostatic potential; two equations of convection-dominated diffusion type are for the electron and hole concentrations. Finite volume element procedure are put forward for the electrostatic potential, while upwind volume element schemes for the two concentration equations. Error estimates in L2 norm for our numerical schemes are derived.
基金
Project supported by the National Natural Science Fbundation and the Natural Science Foundation of Shandong Province
