半导体器件钝化层Si_3N_4薄膜的制备及特性研究

Preparation of Semiconductor Passivation Si3N4 Thin Films and Characteristic Research

采用热分解法在硅衬底上制备了Si3N4薄膜.根据在制备过程中薄膜生长速度随颜色的变化,研究了衬底温度和薄膜沉积速率之间的关系.分别利用AFM对薄膜表面进行观测。C-V法对薄膜和硅片界面态进行了测试.结果表明:所制备的Si3N4薄膜在硅片上以无定形方式存在,在Si3N,薄膜和硅界面之间存在着大量的表面电荷,由于这种高密度表面电荷的存在,导致Si3N4薄膜不适于直接作为半导体器件的表面钝化层.

Si3N4 thin films were deposited in the silicon substrate by thermal analysis deposition technique. The paper studied relations between substrate temperature and deposition rate. Using AFM watched surface of Si3N4 thin films and using C-V method tested interface defect between thin films and silicon. The results show that Si3N4 thin films prepared are amorphous and a large number of charges exist in the interface between Si3N4 thin films and silicon. This high density interface charges can not be used directly as semiconductor surface passivation.